Infineon F4150R12KS4BOSA1, AG-ECONO3-4 , N-Channel Bridge IGBT Module, 180 A max, 1200 V, Panel Mount
- RS-stocknr.:
- 111-6102
- Fabrikantnummer:
- F4150R12KS4BOSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 111-6102
- Fabrikantnummer:
- F4150R12KS4BOSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Vrijgesteld
- Land van herkomst:
- MY
Productomschrijving
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 180 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 960 W |
Package Type | AG-ECONO3-4 |
Configuration | Bridge |
Mounting Type | Panel Mount |
Channel Type | N |
Transistor Configuration | Full Bridge |
Dimensions | 122 x 62 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +125 °C |
- RS-stocknr.:
- 111-6102
- Fabrikantnummer:
- F4150R12KS4BOSA1
- Fabrikant:
- Infineon