- RS-stocknr.:
- 111-6091
- Fabrikantnummer:
- FS100R12KT4GBOSA1
- Fabrikant:
- Infineon
39 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk
€ 170,23
(excl. BTW)
€ 205,98
(incl. BTW)
Aantal stuks | Per stuk |
1 - 1 | € 170,23 |
2 - 4 | € 161,72 |
5 + | € 151,51 |
- RS-stocknr.:
- 111-6091
- Fabrikantnummer:
- FS100R12KT4GBOSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Vrijgesteld
Productomschrijving
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 515 W |
Package Type | AG-ECONO3-4 |
Configuration | 3 Phase Bridge |
Mounting Type | Panel Mount |
Channel Type | N |
Transistor Configuration | 3 Phase |
Dimensions | 122 x 62 x 17mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |
- RS-stocknr.:
- 111-6091
- Fabrikantnummer:
- FS100R12KT4GBOSA1
- Fabrikant:
- Infineon