Fuji Electric 6MBI150U4B-120-50 3 Phase Bridge IGBT Module, 150 A 1200 V, 35-Pin M633, PCB Mount
- RS-stocknr.:
- 462-940
- Fabrikantnummer:
- 6MBI150U4B-120-50
- Fabrikant:
- Fuji Electric
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Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
- RS-stocknr.:
- 462-940
- Fabrikantnummer:
- 6MBI150U4B-120-50
- Fabrikant:
- Fuji Electric
Wetgeving en conformiteit
- Land van herkomst:
- JP
Productomschrijving
IGBT Modules 6-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
Note
Maximum collector current (Ic) values are stated per transistor within the module.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 150 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 735 W |
| Configuration | 3 Phase Bridge |
| Package Type | M633 |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 35 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 462-940
- Fabrikantnummer:
- 6MBI150U4B-120-50
- Fabrikant:
- Fuji Electric