Cypress Semiconductor, FM24CL64B-G

Datasheets
Wetgeving en conformiteit
Conform
Land van herkomst: US
Productomschrijving

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specificaties
Kenmerk Waarde
Memory Size 64kbit
Organisation 8k x 8 bit
Interface Type I2C
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.48mm
Length 4.97mm
Maximum Operating Supply Voltage 3.65 V
Width 3.98mm
Height 1.48mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2.7 V
Number of Words 8k
Automotive Standard AEC-Q100
970 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Tube of 97)
2,695
(excl. BTW)
3,261
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
97 - 97
2,695 €
261,415 €
194 - 485
2,42 €
234,74 €
582 - 970
2,316 €
224,652 €
1067 +
2,19 €
212,43 €
*prijsindicatie
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Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
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Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
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Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...