Cypress Semiconductor, CY15B104Q-SXI

Wetgeving en conformiteit
Land van herkomst: US

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Kenmerk Waarde
Memory Size 4Mbit
Organisation 512k x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 5.33 x 5.33 x 1.78mm
Length 5.33mm
Width 5.33mm
Maximum Operating Supply Voltage 3.6 V
Height 1.78mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2 V
Number of Bits per Word 8bit
Number of Words 512k
Minimum Operating Temperature -40 °C
188 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Tube of 94)
(excl. BTW)
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
94 - 94
20,063 €
1.885,922 €
188 +
19,192 €
1.804,048 €