Cypress Semiconductor FM24V02A-G Serial-I2C FRAM Memory, 256kbit, 2 → 3.6 V 8-Pin SOIC

Wetgeving en conformiteit

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM logically organized as 32K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention an Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-μA active current at 100 kHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Kenmerk Waarde
Memory Size 256kbit
Organisation 32K x 8 bit
Interface Type Serial-I2C
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Maximum Operating Supply Voltage 3.6 V
Width 3.98mm
Height 1.47mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2 V
Minimum Operating Temperature -40 °C
Number of Words 32K
Number of Bits per Word 8bit
890 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Pack of 2)
(excl. BTW)
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
2 - 8
5,82 €
11,64 €
10 - 18
4,32 €
8,64 €
20 - 98
4,205 €
8,41 €
100 - 498
4,10 €
8,20 €
500 +
4,00 €
8,00 €
Related Products
The 25 series Serial Flash family features a ...
The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25PF040C devices are enhanced with extended operating voltage of 2.3-3.6V. ...
128M-bit Serial Flash Memory with uniform 4KB sectors ...
128M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI. Single/Dual/Quad SPI operationsUniform 4KB erasable sectors & 32KB/64KB erasable blocks65,536 pages (256 bytes), page program in 0.7mS (typ.)Continuous Read with 8/16/32/64 Byte WrapClock operation up to 133MHz (266/532MHz equivalent ...
4M-bit 2.5V Serial Flash Memory with uniform 4KB ...
4M-bit 2.5V Serial Flash Memory with uniform 4KB sectors and Dual SPI. Family of Serial Flash MemoriesW25X40CL: 4M-bit/512K-byte (524,288)256-bytes per programmable pageUniform erasable 4KB, 32KB & 64KB regions.SPI with Single / Dual Outputs / I/OStandard SPI: CLK, /CS, DI, DO, ...
CMOS 3.0 Volt Core with Versatile I/O65 nm ...
CMOS 3.0 Volt Core with Versatile I/O65 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O FeatureWide I/O voltage range (VIO): 1.65 V to VCC´16 data busAsynchronous 32-byte Page read512-byte Programming ...