Infineon 4Mbit Parallel FRAM Memory 44-Pin TSOP, FM22L16-55-TG
- RS-stocknr.:
- 171-0958
- Fabrikantnummer:
- FM22L16-55-TG
- Fabrikant:
- Cypress Semiconductor
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- RS-stocknr.:
- 171-0958
- Fabrikantnummer:
- FM22L16-55-TG
- Fabrikant:
- Cypress Semiconductor
Datasheets
Wetgeving en conformiteit
Productomschrijving
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Specificaties
Kenmerk | Waarde |
|---|---|
| Memory Size | 4Mbit |
| Organisation | 256K x 16 bit |
| Interface Type | Parallel |
| Maximum Random Access Time | 55ns |
| Mounting Type | Surface Mount |
| Package Type | TSOP |
| Pin Count | 44 |
| Dimensions | 18.51 x 10.26 x 1.04mm |
| Maximum Operating Supply Voltage | 3.6 V |
| Maximum Operating Temperature | +85 °C |
| Number of Bits per Word | 16bit |
| Minimum Operating Supply Voltage | 2.7 V |
| Minimum Operating Temperature | -40 °C |
| Number of Words | 256K |