Micron N25Q032A11EF640E, SPI NOR 32Mbit Flash Memory, 5ns; 1.8V, 8-Pin MLP

  • RS-stocknr. 782-4636
  • Fabrikantnummer N25Q032A11EF640E
  • Fabrikant Micron
Datasheets
Wetgeving en conformiteit
Conform
Productomschrijving

Flash Memory, Micron

Flash Memory

FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

Specificaties
Kenmerk Waarde
Memory Size 32Mbit
Interface Type SPI
Package Type MLP
Pin Count 8
Organisation 4M x 8 bit
Mounting Type Surface Mount
Cell Type NOR
Minimum Operating Supply Voltage 1.7 V
Maximum Operating Supply Voltage 2 V
Block Organisation Symmetrical
Length 6mm
Height 0.85mm
Width 5mm
Dimensions 6 x 5 x 0.85mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +85 °C
Maximum Random Access Time 5ns
Number of Words 4M
Number of Bits per Word 8bit
1315 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Pack of 5)
1,298
(excl. BTW)
1,571
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
5 - 45
1,298 €
6,49 €
50 - 95
1,202 €
6,01 €
100 - 245
1,012 €
5,06 €
250 - 495
0,854 €
4,27 €
500 +
0,834 €
4,17 €
*prijsindicatie
Verpakkingsopties
Related Products
Easily Add Traceability and Relevant Information to Any ...
Description:
Easily Add Traceability and Relevant Information to Any Individual System1k-Bit EPROM with Page-Level Write Protection and Guaranteed Unique 64-Bit ROM ID Chip for Absolute Traceability1024 Bits Electrically Programmable Read Only Memory (EPROM)Unique, Factory-Lasered and Tested 64-Bit Registration Number (8-Bit ...
The SST39LF010A/020A/040 family of devices from Microchip are ...
Description:
The SST39LF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs. 3.0-3.6V Read and Write OperationsEndurance – 100,000 cycles (typical)Low Power Consumption - Active Current 5 mA, Standby Current 1 μA (typical values at 14 MHz)Sector-Erase Capability – ...
64-Kbit ferroelectric random access memory (F-RAM) logicallyorganized as ...
Description:
64-Kbit ferroelectric random access memory (F-RAM) logicallyorganized as 8K ´ 8 High-endurance 10 trillion (1013) read/writes 121-year data retention (See the Data Retention and Endurance table)NoDelay™ writes Advanced high-reliability ferroelectric processVery fast serial peripheral interface (SPI)Up to 16 MHz ...
64-Kbit ferro electric random access memory (F-RAM) logically ...
Description:
64-Kbit ferro electric random access memory (F-RAM) logically organized as 8K ´ 8 High-endurance 10 trillion (1013) read/writes 121-year data retention (See the Data Retention and Endurance table)No Delay™ writes Advanced high-reliability ferro electric processFast 2-wire Serial interface (I2C)Up to ...