onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

RS-stocknr.:: 688-1502
Fabrikantnummer:: MJ11015G
Fabrikant:: onsemi

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

34 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)

190 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)

Toegevoegd

Prijs Per stuk (in een verpakking 2)

€ 7,67

(excl. BTW)

€ 9,28

(incl. BTW)

Aantal stuks	Per stuk	Per pak*
2 - 8	€ 7,67	€ 15,34
10 - 98	€ 6,60	€ 13,20
100 - 198	€ 5,48	€ 10,96
200 - 498	€ 5,17	€ 10,34
500 +	€ 4,82	€ 9,64
*prijsindicatie

RS-stocknr.:: 688-1502
Fabrikantnummer:: MJ11015G
Fabrikant:: onsemi

Datasheets

Wetgeving en conformiteit

Productomschrijving

PNP Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

Specificaties

Kenmerk	Waarde
Transistor Type	PNP
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Width	26.67mm
Dimensions	39.37 x 26.67 x 8.51mm
Maximum Operating Temperature	+200 °C
Length	39.37mm
Minimum Operating Temperature	-55 °C
Height	8.51mm

RS-stocknr.:: 688-1502
Fabrikantnummer:: MJ11015G
Fabrikant:: onsemi