onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204
- RS-stocknr.:
- 122-0071
- Fabrikantnummer:
- MJ11016G
- Fabrikant:
- onsemi
600 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een tray 100)
€ 4,072
(excl. BTW)
€ 4,927
(incl. BTW)
| Aantal stuks | Per stuk | Per tray* |
| 100 + | € 4,072 | € 407,20 |
| *prijsindicatie | ||
- RS-stocknr.:
- 122-0071
- Fabrikantnummer:
- MJ11016G
- Fabrikant:
- onsemi
Datasheets
Wetgeving en conformiteit
- Land van herkomst:
- CZ
Productomschrijving
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
Specificaties
Kenmerk | Waarde |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 120 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | TO-204 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 200 |
| Maximum Base Emitter Saturation Voltage | 5 V |
| Maximum Collector Base Voltage | 120 V |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Maximum Operating Temperature | +200 °C |
| Length | 39.37mm |
| Height | 8.51mm |
| Minimum Operating Temperature | -55 °C |
| Width | 26.67mm |
| Dimensions | 39.37 x 26.67 x 8.51mm |