- RS-stocknr.:
- 103-5055
- Fabrikantnummer:
- MJ11015G
- Fabrikant:
- onsemi
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 02/08/2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (in een tray 100)
€ 5,638
(excl. BTW)
€ 6,822
(incl. BTW)
Aantal stuks | Per stuk | Per tray* |
100 + | € 5,638 | € 563,80 |
*prijsindicatie |
- RS-stocknr.:
- 103-5055
- Fabrikantnummer:
- MJ11015G
- Fabrikant:
- onsemi
Wetgeving en conformiteit
- Land van herkomst:
- CZ
Productomschrijving
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
PNP Polarity
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
PNP Polarity
Specificaties
Kenmerk | Waarde |
---|---|
Transistor Type | PNP |
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 120 V |
Maximum Emitter Base Voltage | 5 V |
Package Type | TO-204 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Number of Elements per Chip | 1 |
Minimum DC Current Gain | 200 |
Maximum Base Emitter Saturation Voltage | 5 V |
Maximum Collector Base Voltage | 120 V |
Maximum Collector Emitter Saturation Voltage | 4 V |
Height | 8.51mm |
Maximum Operating Temperature | +200 °C |
Length | 39.37mm |
Dimensions | 39.37 x 26.67 x 8.51mm |
Minimum Operating Temperature | -55 °C |
Width | 26.67mm |
- RS-stocknr.:
- 103-5055
- Fabrikantnummer:
- MJ11015G
- Fabrikant:
- onsemi