onsemi BDV65BG NPN Transistor, 10 A, 100 V, 3-Pin TO-218
- RS-stocknr.:
- 184-4189
- Fabrikantnummer:
- BDV65BG
- Fabrikant:
- onsemi
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- RS-stocknr.:
- 184-4189
- Fabrikantnummer:
- BDV65BG
- Fabrikant:
- onsemi
Datasheets
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
Specificaties
Kenmerk | Waarde |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 100 V |
| Package Type | TO-218 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 10.53 x 4.83 x 15.75mm |