N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF
- RS-stocknr.:
- 178-0818
- Fabrikantnummer:
- IRFBE30PBF
- Fabrikant:
- Vishay
450 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een tube 50)
€ 2,505
(excl. BTW)
€ 3,031
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 50 - 50 | € 2,505 | € 125,25 |
| 100 - 200 | € 2,179 | € 108,95 |
| 250 + | € 1,854 | € 92,70 |
| *prijsindicatie | ||
- RS-stocknr.:
- 178-0818
- Fabrikantnummer:
- IRFBE30PBF
- Fabrikant:
- Vishay
Datasheets
Wetgeving en conformiteit
Productomschrijving
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.1 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 10.41mm |
| Width | 4.7mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Height | 9.01mm |
| Minimum Operating Temperature | -55 °C |