P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP Infineon IRF5806TRPBF

RS-stocknr.:: 145-9508
Fabrikantnummer:: IRF5806TRPBF
Fabrikant:: Infineon

P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP Infineon IRF5806TRPBF

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RS-stocknr.:: 145-9508
Fabrikantnummer:: IRF5806TRPBF
Fabrikant:: Infineon

Datasheets

Wetgeving en conformiteit

Land van herkomst:: MY

Productomschrijving

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties

Kenmerk	Waarde
Channel Type	P
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	20 V
Package Type	TSOP
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	147 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Minimum Gate Threshold Voltage	0.45V
Maximum Power Dissipation	2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.7mm
Number of Elements per Chip	1
Transistor Material	Si
Length	3.1mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	8.3 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	1mm

RS-stocknr.:: 145-9508
Fabrikantnummer:: IRF5806TRPBF
Fabrikant:: Infineon